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inchange semiconductor product specification silicon npn power transistors 2SD1883 description ? with to-3pml package ? high breakdown voltage ?high reliability . ? high speed applications ? color tv horizontal deflection output. ? color display horizontal deflection output . pinning pin description 1 base 2 collector 3 emitter maximum absolute ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 4 a i cm collector current-peak 12 a p c collector power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1883 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =2.5a;i b =0.8 a 5.0 v v besat base-emitter saturation voltage i c =2.5a;i b =0.8 a 1.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma;i b =0 800 v i ebo emitter cut-off current v eb =4v; i c =0 1.0 ma i cbo collector cut-off current v cb =800v; i e =0 10 | a i ces collector cut-off current v ce =1500v; r be =0 1.0 ma h fe-1 dc current gain i c =0.5 a ; v ce =5v 8 h fe-2 dc current gain i c =2.5a ; v ce =5v 3.5 7 t f fall time i c =3a;r l =66.7 |? ; i b1 =0.8a i b2 =-1.6a;v cc =200v 0.1 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1883 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SD1883

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